I've made a little "schematic" to compare the gate drive stage between IGBT in front drive unit and SiC FET in rear drive unit. Left side with the transistor stage is both the same. Midpoint between the two 8V2 zeners goes to gate drive IC output. After that IGBT has 4,3 ohms gate resistance to low ...

Do you have any thoughts about the sort of pyrofuse, placed in the newer rear inverters? Would you transfer it to your design or remove it? I mean, it simply goes away by removing the pcb ;) Only attached with two screws in the frame of the hall sensor.

Pyrofuse.jpg

Seems its not only placed in ...

What I can say for now is, that the gate resistors are smaller in value. For IGBT it's 4,3 ohms and for SiC it's 12 ohms because IGBT gate charge is A LOT more than SiC FET. Typical x3 for similar devices.
And gate voltages are -5V and +18V for the IGBTs. Here i think it's the same as SiC.

Since creating this topic I brained a little bit about it and bought a rear drive inverter. So my latest thoughts about it I shared in the last video, which was thankfully linked in the "rear drive unit hacking" thread.
As you wrote, async front is only in AWD and in terms of efficiency and range ...

Good evening together!

I'm the "german guy" :D But you guys can call me Ingo as well.

First I wanna say, I'm not a professional. I'm just a hobbyist probing (and sometimes sawing) around and sometimes get to something. Content about that I'm only creating in german language, because there are so ...

Good day!

Recently I disassembled a flooded inverter from a model 3 front drive unit, hoping to harvest some SiC FETs for other projects.
But as I made my way down to the bare transistors, I found them labeled GK0X0 instead of GK026. And as I tested them, they behave as IGBT and not as FET ...