Glossary of Terms: Difference between revisions
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|An '''insulated-gate bipolar transistor''' ('''IGBT''') is a three-terminal power semiconductor device primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast switching. | |An '''insulated-gate bipolar transistor''' ('''IGBT''') is a three-terminal power semiconductor device primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast switching. | ||
|[[wikipedia:Insulated-gate_bipolar_transistor|Link]] | |[[wikipedia:Insulated-gate_bipolar_transistor|Link]] | ||
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Revision as of 14:33, 21 May 2020
A page to help to grips with the all the acronyms on the forums to get newbies up to speed and for general reference
A
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B
Acronym | Description | Wikipedia |
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BOM | A Bill of Materials (BOM) is a list of the raw materials, sub-assemblies, intermediate assemblies, sub-components, parts, and the quantities of each needed to manufacture an end product. | Link |
C
Acronym / Term | Description | Wikipedia |
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CAN | A Controller Area Network (CAN bus) is a robust vehicle bus standard designed to allow microcontrollers and devices to communicate with each other's applications without a host computer. | Link |
D
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E
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F
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FOC | Field-Oriented Control (FOC), is a variable-frequency drive (VFD) control method in which the stator currents of a three-phase AC electric motor are identified as two orthogonal components that can be visualized with a vector. | Link |
G
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H
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I
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IGBT | An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast switching. | Link |
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